RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Compare
PNY Electronics PNY 2GB vs Micron Technology 16ATF2G64AZ-2G6J1 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
33
Around 18% lower latency
Reasons to consider
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Report a bug
Faster reading speed, GB/s
16.1
13.8
Average value in the tests
Faster write speed, GB/s
12.7
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
33
Read speed, GB/s
13.8
16.1
Write speed, GB/s
8.4
12.7
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2274
3181
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3600C17-16GTZKK 16GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 8G2666CL19 8GB
PNY Electronics PNY 2GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
SK Hynix HMA81GS6CJR8N-XN 8GB
Kingston 99U5474-010.A00LF 2GB
Samsung M378A1K43DB2-CVF 8GB
A-DATA Technology AX5U6000C4016G-B 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-2400C15-8GRR 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Ramsta Ramsta-2666MHz-4G 4GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMD32GX4M4B3600C16 8GB
Corsair CMX4GX3M1A1333C9 4GB
Kingston X5H5PW-MIB 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M378A1G43EB1-CRC 8GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Avant Technology F641GU67F9333G 8GB
Kingston KHX3300C16D4/4GX 4GB
Report a bug
×
Bug description
Source link