RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Compare
PNY Electronics PNY 2GB vs Micron Technology 16ATF2G64HZ-2G6J1 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
38
Around 29% lower latency
Reasons to consider
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Report a bug
Faster reading speed, GB/s
15.2
13.8
Average value in the tests
Faster write speed, GB/s
11.4
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
38
Read speed, GB/s
13.8
15.2
Write speed, GB/s
8.4
11.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2274
2821
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3400C16-8GTZSW 8GB
PNY Electronics PNY 2GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology M471A1K43BB1-CRC 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KV0M5R-HYD 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston XG9XKG-MIE 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA82GR7AFR8N-VK 16GB
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3200C15-8GTZKY 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2133C15-4GRK 4GB
Kingston XCCT36-MIE 16GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
Samsung M471B1G73QH0-YK0 8GB
Apacer Technology GD2.2229BH.001 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Teikon TMA851U6AFR6N-UHHC 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3200C14-16GTZ 16GB
Report a bug
×
Bug description
Source link