PNY Electronics PNY 2GB
Samsung M474A1G43EB1-CRC 8GB

PNY Electronics PNY 2GB vs Samsung M474A1G43EB1-CRC 8GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

Differences

  • Below the latency in the PassMark tests, ns
    22 left arrow 27
    Around -23% lower latency
  • Faster reading speed, GB/s
    17.2 left arrow 13.8
    Average value in the tests
  • Faster write speed, GB/s
    13.8 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung M474A1G43EB1-CRC 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 22
  • Read speed, GB/s
    13.8 left arrow 17.2
  • Write speed, GB/s
    8.4 left arrow 13.8
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 2989
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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