PNY Electronics PNY 2GB
Shenzhen Technology Co Ltd 8GB

PNY Electronics PNY 2GB vs Shenzhen Technology Co Ltd 8GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Shenzhen Technology Co Ltd  8GB

Shenzhen Technology Co Ltd 8GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 32
    Around 16% lower latency
  • Faster reading speed, GB/s
    15.9 left arrow 13.8
    Average value in the tests
  • Faster write speed, GB/s
    11.9 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Shenzhen Technology Co Ltd 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 32
  • Read speed, GB/s
    13.8 left arrow 15.9
  • Write speed, GB/s
    8.4 left arrow 11.9
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 2831
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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