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PUSKILL DDR3 1600 8G 8GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB

PUSKILL DDR3 1600 8G 8GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB

Overall score
star star star star star
PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Overall score
star star star star star
Crucial Technology BLS16G4D30AESC.M16FE 16GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

Differences Specifications Comments

Differences

PUSKILL DDR3 1600 8G 8GB Reasons to consider
PUSKILL DDR3 1600 8G 8GB
Report a bug
Crucial Technology BLS16G4D30AESC.M16FE 16GB Reasons to consider
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 38
    Around -36% lower latency
  • Faster reading speed, GB/s
    17.4 left arrow 16.7
    Average value in the tests
  • Faster write speed, GB/s
    13.1 left arrow 10.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    38 left arrow 28
  • Read speed, GB/s
    16.7 left arrow 17.4
  • Write speed, GB/s
    10.0 left arrow 13.1
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2753 left arrow 3437

PUSKILL DDR3 1600 8G 8GB RAM comparisons

A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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