RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PUSKILL DDR3 1600 8G 8GB
Samsung M471A1K43DB1-CTD 8GB
Compare
PUSKILL DDR3 1600 8G 8GB vs Samsung M471A1K43DB1-CTD 8GB
Overall score
PUSKILL DDR3 1600 8G 8GB
Overall score
Samsung M471A1K43DB1-CTD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PUSKILL DDR3 1600 8G 8GB
Report a bug
Faster reading speed, GB/s
16.7
15.7
Average value in the tests
Reasons to consider
Samsung M471A1K43DB1-CTD 8GB
Report a bug
Below the latency in the PassMark tests, ns
35
38
Around -9% lower latency
Faster write speed, GB/s
11.8
10.0
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
PUSKILL DDR3 1600 8G 8GB
Samsung M471A1K43DB1-CTD 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
38
35
Read speed, GB/s
16.7
15.7
Write speed, GB/s
10.0
11.8
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2753
2767
PUSKILL DDR3 1600 8G 8GB RAM comparisons
A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Samsung M471A1K43DB1-CTD 8GB RAM comparisons
Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PUSKILL DDR3 1600 8G 8GB
Samsung M471A1K43DB1-CTD 8GB
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Panram International Corporation L421008G4C1528K34O8A 8
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
AMD R5316G1609U2K 8GB
Wilk Elektronik S.A. W-HK26S16G 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-3000C16-16GSXKB 16GB
Nanya Technology M2X4G64CB88CHN-DG 4GB
Panram International Corporation W4U2666P-8G 8GB
Apacer Technology 78.01G86.9H50C 1GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-3466C16-16GTZR 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Panram International Corporation PUD42400C154G4NJK 4GB
Samsung M471B5173DB0-YK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
Report a bug
×
Bug description
Source link