RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMR5030ME68F9F1600 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Compare
Ramaxel Technology RMR5030ME68F9F1600 4GB vs Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Overall score
Ramaxel Technology RMR5030ME68F9F1600 4GB
Overall score
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMR5030ME68F9F1600 4GB
Report a bug
Below the latency in the PassMark tests, ns
42
86
Around 51% lower latency
Reasons to consider
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Report a bug
Faster reading speed, GB/s
14.3
13.2
Average value in the tests
Faster write speed, GB/s
8.1
7.8
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Ramaxel Technology RMR5030ME68F9F1600 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
86
Read speed, GB/s
13.2
14.3
Write speed, GB/s
7.8
8.1
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2001
1658
Ramaxel Technology RMR5030ME68F9F1600 4GB RAM comparisons
Ramaxel Technology RMR5030EB68F9W1600 4GB
Samsung M378A1K43BB2-CRC 8GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1G43DB0-CPB 8GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Kingston 9965525-018.A00LF 4GB
Corsair MK16GX44A2666C16 4GB
Samsung M378B5773DH0-CH9 2GB
Patriot Memory (PDP Systems) PSD48G24002 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kllisre 0000 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M391A2K43BB1-CPB 16GB
SK Hynix HMT351R7EFR8C-RD 4GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4266C19-8GTRS 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Unifosa Corporation HU564404EP0200 4GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Report a bug
×
Bug description
Source link