RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMR5040ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Compare
Ramaxel Technology RMR5040ED58E9W1600 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Overall score
Ramaxel Technology RMR5040ED58E9W1600 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMR5040ED58E9W1600 4GB
Report a bug
Below the latency in the PassMark tests, ns
43
122
Around 65% lower latency
Faster reading speed, GB/s
13.2
9.4
Average value in the tests
Faster write speed, GB/s
9.3
5.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Ramaxel Technology RMR5040ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
122
Read speed, GB/s
13.2
9.4
Write speed, GB/s
9.3
5.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2285
1411
Ramaxel Technology RMR5040ED58E9W1600 4GB RAM comparisons
G Skill Intl F3-1600C11-8GISL 8GB
A-DATA Technology DDR4 4133 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMK64GX4M4X4000C18 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL16G36C16U4RL.M16FE 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Corsair CM5S16GM4800A40K2 16GB
G Skill Intl F4-3600C19-8GSXF 8GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-4000C18-8GTZSW 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston HP26D4S9S8MD-8 8GB
Kingston KHX318C10FR/8G 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
DSL Memory D4SS1G082SH21A-B 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL16G32C16U4R.M16FE 16GB
Corsair CMZ16GX3M2A1866C9 8GB
Apacer Technology D12.2326WH.001 16GB
Report a bug
×
Bug description
Source link