RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Compare
Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Overall score
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Overall score
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
42
74
Around 43% lower latency
Faster write speed, GB/s
7.8
7.7
Average value in the tests
Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Report a bug
Faster reading speed, GB/s
13.6
13.3
Average value in the tests
Specifications
Complete list of technical specifications
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
42
74
Read speed, GB/s
13.3
13.6
Write speed, GB/s
7.8
7.7
Memory bandwidth, mbps
21300
21300
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2181
1616
Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-CH9 8GB
Kingston ACR26D4U9S1KA-4 4GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMK32GX4M4A2666C15 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston KHX3200C20S4/8G 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Corsair CM5S16GM4800A40K2 16GB
Corsair CMD64GX4M4B3333C16 16GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C15-8GVS 8GB
Kingston KHX3200C18D4/8G 8GB
Mushkin 99[2/7/4]209F 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
A-DATA Technology AD63I1C1624EV 4GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KHX3200C16D4/8GX 8GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Report a bug
×
Bug description
Source link