RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C15-8GVS 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-2400C15-8GVS 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
G Skill Intl F4-2400C15-8GVS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
16.5
Average value in the tests
Faster write speed, GB/s
2,404.5
12.0
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C15-8GVS 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
104
Around -225% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C15-8GVS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
32
Read speed, GB/s
3,192.0
16.5
Write speed, GB/s
2,404.5
12.0
Memory bandwidth, mbps
6400
17000
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
786
2974
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
G Skill Intl F4-2400C15-8GVS 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F3-1866C8-8GTX 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C15-8GVS 8GB
Kingston KVR533D2N4 512MB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMD16GX4M4B3200C16 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M378A1G43DB0-CPB 8GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C16-8GTZRX 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C19-16GSXF 16GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3200C16-8GSX 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2133C15-8GSQ 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3600C18-16GTRG 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-4133C19-8GTZKW 8GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Report a bug
×
Bug description
Source link