RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMT3170EB68F9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Compare
Ramaxel Technology RMT3170EB68F9W1600 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Overall score
Ramaxel Technology RMT3170EB68F9W1600 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMT3170EB68F9W1600 4GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
43
Around -48% lower latency
Faster reading speed, GB/s
12.2
11.4
Average value in the tests
Faster write speed, GB/s
9.6
7.7
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Ramaxel Technology RMT3170EB68F9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
29
Read speed, GB/s
11.4
12.2
Write speed, GB/s
7.7
9.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1823
2443
Ramaxel Technology RMT3170EB68F9W1600 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-028.A00LF 4GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Samsung M3 93T5750CZA-CE6 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3000C16-16GTZR 16GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905665-021.A00G 4GB
Kingston 9905584-016.A00LF 4GB
Apacer Technology 78.CAGP7.AFW0C 8GB
PUSKILL DDR3 1600 8G 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMT64GX4M4C3200C16 16GB
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Samsung M393B2G70BH0-CK0 16GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9965604-008.C00G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
INTENSO 5641160 8GB
AMD R538G1601U2S 8GB
Kingston XW21KG-MIE-NX 8GB
Report a bug
×
Bug description
Source link