RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Compare
Ramos Technology EWB8GB681CA3-16IC 8GB vs Micron Technology 9ASF1G72AZ-2G3B1 8GB
Overall score
Ramos Technology EWB8GB681CA3-16IC 8GB
Overall score
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramos Technology EWB8GB681CA3-16IC 8GB
Report a bug
Faster reading speed, GB/s
15.3
15
Average value in the tests
Faster write speed, GB/s
9.8
6.8
Average value in the tests
Reasons to consider
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
25
Around -14% lower latency
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
22
Read speed, GB/s
15.3
15.0
Write speed, GB/s
9.8
6.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2646
2272
Ramos Technology EWB8GB681CA3-16IC 8GB RAM comparisons
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D082-805G 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
AMD R5316G1609U2K 8GB
Apacer Technology 78.C2GF2.AU00B 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hewlett-Packard 7TE39AA#ABC 8GB
Kingston KHX3200C18D4/8G 8GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Corsair CMW16GX4M1Z3200C16 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Corsair CMW32GX4M2C3000C15 16GB
AMD R5316G1609U2K 8GB
Kingston 9965596-016.B01G 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-3466C18-8GSXW 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
PUSKILL PJ8TFK1GM8 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
Samsung M471B5773DH0-CH9 2GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Report a bug
×
Bug description
Source link