RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology EWB8GB681CA3-16IC 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Compare
Ramos Technology EWB8GB681CA3-16IC 8GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Overall score
Ramos Technology EWB8GB681CA3-16IC 8GB
Overall score
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramos Technology EWB8GB681CA3-16IC 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
59
Around 58% lower latency
Faster write speed, GB/s
9.8
9.7
Average value in the tests
Reasons to consider
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Report a bug
Faster reading speed, GB/s
17.2
15.3
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Ramos Technology EWB8GB681CA3-16IC 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
59
Read speed, GB/s
15.3
17.2
Write speed, GB/s
9.8
9.7
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2646
2181
Ramos Technology EWB8GB681CA3-16IC 8GB RAM comparisons
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Ramos Technology EWB8GB681CA3-16IC 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3200C16-4GRK 4GB
Kingston 99U5428-101.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Golden Empire CL18-20-20 D4-3600 8GB
Samsung M393B2G70BH0-CH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Samsung M393B2G70BH0-CK0 16GB
Corsair CMSO16GX4M2A2133C15 8GB
Kingston 99P5474-014.A00LF 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Corsair VSA2GSDS667C4 2GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Kingston KHX2800C14D4/8GX 8GB
Samsung M471A1K1KBB0-CPB 8GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Kingston 9905471-006.A00LF 4GB
Kingston 9905702-137.A00G 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Report a bug
×
Bug description
Source link