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Samsung 1600 CL10 Series 8GB
AMD R744G2400U1S-UO 4GB
Compare
Samsung 1600 CL10 Series 8GB vs AMD R744G2400U1S-UO 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
AMD R744G2400U1S-UO 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
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Below the latency in the PassMark tests, ns
25
66
Around 62% lower latency
Faster write speed, GB/s
10.1
8.5
Average value in the tests
Reasons to consider
AMD R744G2400U1S-UO 4GB
Report a bug
Faster reading speed, GB/s
16.7
16.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
AMD R744G2400U1S-UO 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
66
Read speed, GB/s
16.1
16.7
Write speed, GB/s
10.1
8.5
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
1912
Samsung 1600 CL10 Series 8GB RAM comparisons
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Samsung 1600 CL10 Series 8GB
AMD R744G2400U1S-UO 4GB RAM comparisons
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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