RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C15Z8GNT 8GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-2400C15Z8GNT 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-2400C15Z8GNT 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
69
Around 64% lower latency
Faster reading speed, GB/s
16.1
13.6
Average value in the tests
Faster write speed, GB/s
10.1
6.5
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C15Z8GNT 8GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C15Z8GNT 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
69
Read speed, GB/s
16.1
13.6
Write speed, GB/s
10.1
6.5
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
1598
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C15Z8GNT 8GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905663-021.A00G 16GB
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA41GR7MFR4N-TF 8GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston 9905624-025.A00G 8GB
A-DATA Technology DOVF1B163G2G 2GB
Hewlett-Packard 7EH98AA#ABB 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK192GX4M12P3200C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C17-8GVK 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMD16GX4M4B3400C16 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMWB8G1L2666A16W4 8GB
Samsung M471B5273DH0-CH9 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston LV32D4U2S8ME-16X 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMD16GX4M4B3400C16 4GB
Kingston 99P5474-037.A00LF 4GB
G Skill Intl F5-6000U3636E16G 16GB
Report a bug
×
Bug description
Source link