Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-2400C15Z8GNT 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

G Skill Intl F4-2400C15Z8GNT 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 69

左右 64% 更低的延时
更快的读取速度，GB/s

16.1 13.6

测试中的平均数值
更快的写入速度，GB/s

10.1 6.5

测试中的平均数值

G Skill Intl F4-2400C15Z8GNT 8GB

需要考虑的原因
G Skill Intl F4-2400C15Z8GNT 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 69
读取速度，GB/s

16.1 13.6
写入速度，GB/s

10.1 6.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 1598

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-3400C16-8GVK 8GB

G Skill Intl F4-3400C16-8GVK 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

G Skill Intl F4-3600C18-16GTRG 16GB

G Skill Intl F4-3600C18-16GTRG 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Neo Forza NMUD480E86-3200 8GB

Neo Forza NMUD480E86-3200 8GB

Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

Asgard VMA42UG-MEC1U2AW1 8GB

Asgard VMA42UG-MEC1U2AW1 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston KHX3333C16D4/16GX 16GB

Kingston KHX3333C16D4/16GX 16GB