RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C17-16GTZKK 16GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3600C17-16GTZKK 16GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-3600C17-16GTZKK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3600C17-16GTZKK 16GB
Report a bug
Below the latency in the PassMark tests, ns
20
25
Around -25% lower latency
Faster reading speed, GB/s
20.1
16.1
Average value in the tests
Faster write speed, GB/s
15.7
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C17-16GTZKK 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
20
Read speed, GB/s
16.1
20.1
Write speed, GB/s
10.1
15.7
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
3726
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C17-16GTZKK 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C17-16GTZKK 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Samsung M392A4K40BM0-CRC 32GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
Samsung M378T5663QZ3-CF7 2GB
Kingston 9905734-061.A00G 32GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX426C13/8G 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KY7N41-MIE 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M471A2K43EB1-CTD 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471A5244CB0-CTD 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
AMD R5316G1609U2K 8GB
Kingston KHX21334D4/8G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Gowe Technology Co. Ltd. GMT8G04UCL116P-PBC 8GB
Kingston 99U5701-003.A00G 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
Report a bug
×
Bug description
Source link