RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
InnoDisk Corporation 16GB
Compare
Samsung 1600 CL10 Series 8GB vs InnoDisk Corporation 16GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
InnoDisk Corporation 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
38
Around 34% lower latency
Faster reading speed, GB/s
16.1
7.7
Average value in the tests
Faster write speed, GB/s
10.1
8.2
Average value in the tests
Reasons to consider
InnoDisk Corporation 16GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
InnoDisk Corporation 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
38
Read speed, GB/s
16.1
7.7
Write speed, GB/s
10.1
8.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
2163
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
InnoDisk Corporation 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
SK Hynix HMA81GS6CJR8N-XN 8GB
Kingston HX318C10FK/4 4GB
A-DATA Technology DDR4 2400 16GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMD128GX4M8A2666C15 16GB
Strontium EVMT8G1600U86S 8GB
G Skill Intl F4-3600C14-8GTZN 8GB
Samsung M378B5173EB0-YK0 4GB
Samsung M378B5273CH0-CH9 4GB
Team Group Inc. UD5-6400 16GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Kingston KHX16 4GB
Samsung M471A2K43BB1-CRC 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3200C14-8GTZKW 8GB
Kingston KVT8FP-HYC 4GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905622-025.A00G 4GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Apacer Technology 78.BAGN8.AZC0B 4GB
Samsung DDR3 8GB 1600MHz 8GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
Report a bug
×
Bug description
Source link