RAM comparison Samsung 1600 CL10 Series 8GB vs InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Samsung 1600 CL10 Series 8GB vs InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Overall score

Samsung 1600 CL10 Series 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung 1600 CL10 Series 8GB

Below the latency in the PassMark tests, ns

25 101

Around 75% lower latency
Faster reading speed, GB/s

16.1 12.1

Average value in the tests
Faster write speed, GB/s

10.1 6.7

Average value in the tests

Reasons to consider
InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Complete list of technical specifications

Samsung 1600 CL10 Series 8GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Main characteristics

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2764 1382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns