RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Micron Technology 4ATF51264HZ-2G6E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
38
Around 34% lower latency
Faster reading speed, GB/s
16.1
14.2
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
Report a bug
Faster write speed, GB/s
10.3
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
38
Read speed, GB/s
16.1
14.2
Write speed, GB/s
10.1
10.3
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
2148
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 4ATF51264HZ-2G6E1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673FH0-CH9 2GB
Essencore Limited IM44GU48N26-FFFHM 4GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Essencore Limited KD48GU880-34A170X 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Corsair CMSX8GX4M2A2400C16 4GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2666C15-8GVS 8GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Corsair CMK16GX4M2F4400C19 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Patriot Memory (PDP Systems) 2400 CL11 Series 8GB
Corsair CMD8GX4M2B3466C18 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
AMD R948G3206U2S 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
Peak Electronics 256X64M-67E 2GB
Ramsta Ramsta-2666MHz-4G 4GB
Report a bug
×
Bug description
Source link