RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Micron Technology 8ATF1G64AZ-2G6E1 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
33
Around 24% lower latency
Reasons to consider
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Report a bug
Faster reading speed, GB/s
16.2
16.1
Average value in the tests
Faster write speed, GB/s
12.5
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
33
Read speed, GB/s
16.1
16.2
Write speed, GB/s
10.1
12.5
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
2973
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
A-DATA Technology DDR3 1600 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2400C17-4GVR 4GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Corsair CMW16GX4M2K3600C16 8GB
Kingston KF3200C16D4/16GX 16GB
G Skill Intl F4-3000C15-8GVKB 8GB
Samsung M393B2G70BH0-CH9 16GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Kingston HP698651-154-MCN 8GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905713-019.A00G 4GB
Kingston 9905469-143.A00LF 4GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M378A1G43DB0-CPB 8GB
AMD R748G2133U2S 8GB
Corsair CML8GX3M2A1866C9 4GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMK32GX4M4A2666C15 8GB
Report a bug
×
Bug description
Source link