RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Micron Technology 8ATF1G64AZ-2G6J1 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
30
Around 17% lower latency
Reasons to consider
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Report a bug
Faster reading speed, GB/s
16.7
16.1
Average value in the tests
Faster write speed, GB/s
11.0
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
30
Read speed, GB/s
16.1
16.7
Write speed, GB/s
10.1
11.0
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
2870
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M323R2GA3BB0-CQKOD 16GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
Samsung M378B5673EH1-CF8 2GB
Corsair MK16GX44A2666C16 4GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix HMA82GS6JJR8N-VK 16GB
Samsung M378T5663QZ3-CF7 2GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
AMD R5316G1609U2K 8GB
Kingston 9905712-048.A00G 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Corsair CM2X1024-8500C5D 1GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Samsung M471B5673FH0-CF8 2GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Team Group Inc. Team-Elite-2133 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CM4X8GE2666C16K4 8GB
Corsair VS1GB800D2 1GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Kingston 9965433-034.A00LF 4GB
Corsair CMK32GX4M4B3200C16 8GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMD64GX4M4C3000C15 16GB
Report a bug
×
Bug description
Source link