RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Micron Technology 8ATF51264HZ-2G1A2 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Micron Technology 8ATF51264HZ-2G1A2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
36
Around 31% lower latency
Faster reading speed, GB/s
16.1
13.6
Average value in the tests
Faster write speed, GB/s
10.1
9.0
Average value in the tests
Reasons to consider
Micron Technology 8ATF51264HZ-2G1A2 4GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
36
Read speed, GB/s
16.1
13.6
Write speed, GB/s
10.1
9.0
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
1778
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF51264HZ-2G1A2 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X16GE2400Z16K4 16GB
PUSKILL DDR3 1600 8G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMU16GX4M2A2400C16 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston KHX2400C14/16G 16GB
PNY Electronics PNY 2GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CB8GS2400.C8JT 8GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3600C14-16GTZRA 16GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A1G44AB0-CWE 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M471A1K1KBB0-CPB 8GB
Samsung M3 78T2863QZS-CF7 1GB
Samsung M471A2K43DB1-CTD 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston XWM8G1-MIE 32GB
Report a bug
×
Bug description
Source link