Samsung 1600 CL10 Series 8GB vs SK Hynix HMA451U6MFR8N-TF 4GB

Overall score

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score

SK Hynix HMA451U6MFR8N-TF 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB

Reasons to consider
Samsung 1600 CL10 Series 8GB

Below the latency in the PassMark tests, ns

25 36

Around 31% lower latency
Faster reading speed, GB/s

16.1 13.4

Average value in the tests

SK Hynix HMA451U6MFR8N-TF 4GB

Reasons to consider
SK Hynix HMA451U6MFR8N-TF 4GB

Faster write speed, GB/s

10.3 10.1

Average value in the tests
Higher memory bandwidth, mbps

17000 12800

Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications

Samsung 1600 CL10 Series 8GB

SK Hynix HMA451U6MFR8N-TF 4GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

25 36
Read speed, GB/s

16.1 13.4
Write speed, GB/s

10.1 10.3
Memory bandwidth, mbps

12800 17000

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2764 2466

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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