RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Team Group Inc. TEANGROUP-UD4-2400 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Team Group Inc. TEANGROUP-UD4-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Reasons to consider
Team Group Inc. TEANGROUP-UD4-2400 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
25
Around -9% lower latency
Faster reading speed, GB/s
17.1
16.1
Average value in the tests
Faster write speed, GB/s
13.5
10.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
23
Read speed, GB/s
16.1
17.1
Write speed, GB/s
10.1
13.5
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2764
2922
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-YK0 16GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK32GX4M4A2800C16 8GB
Corsair VS1GB800D2 1GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3000C16-8GSXKB 8GB
Kingston 99U5469-045.A00LF 4GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Kingston KHX2666C16/8G 8GB
Kingston KHX2400C15/8G 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905599-010.A00G 4GB
Samsung M471B5173QH0-YK0 4GB
Lexar Co Limited LD4AU016G-H2666G 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
A-DATA Technology DQKD1A08 1GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Report a bug
×
Bug description
Source link