RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Compare
Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Overall score
Samsung DDR3 8GB 1600MHz 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Faster reading speed, GB/s
14.9
13.5
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
43
Around -48% lower latency
Faster write speed, GB/s
10.2
9.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
29
Read speed, GB/s
14.9
13.5
Write speed, GB/s
9.6
10.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2506
2088
Samsung DDR3 8GB 1600MHz 8GB RAM comparisons
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB RAM comparisons
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-2400C15-8GRR 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CB8GS2400.C8D 8GB
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
SK Hynix HYMP112U64CP8-S6 1GB
Kingston KHX2666C15D4/4G 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Kingston KHX318C10FR/8G 8GB
Kingston CBD26D4U9S8ME-8 8GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Mushkin 991679ES 996679ES 2GB
G Skill Intl F4-3200C14-8GTZR 8GB
Samsung M393A1G40DB0-CPB 8GB
Avant Technology W641GU48J5213ND 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Report a bug
×
Bug description
Source link