RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Compare
Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Overall score
Samsung DDR3 8GB 1600MHz 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Faster reading speed, GB/s
14.9
13.5
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
43
Around -48% lower latency
Faster write speed, GB/s
10.2
9.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
29
Read speed, GB/s
14.9
13.5
Write speed, GB/s
9.6
10.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2506
2088
Samsung DDR3 8GB 1600MHz 8GB RAM comparisons
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB RAM comparisons
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
SpecTek Incorporated 16G2666CL19 16GB
Qimonda 72T128420EFA3SB2 1GB
G Skill Intl F4-2400C17-8GVR 8GB
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-3200C14-16GTZKY 16GB
Samsung M395T2863QZ4-CF76 1GB
Essencore Limited KD4AGU88C-26N1900 16GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMSX16GX4M1A2666C18 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Kingston 9905403-090.A01LF 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A2K43BB1-CPB 16GB
Kingston 99U5315-023.A00LF 512MB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Samsung 1600 CL10 Series 8GB
Kingston 9905670-012.A00G 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M471A1G44BB0-CWE 8GB
Kingston 9905403-134.A00LF 2GB
Corsair CMD32GX4M4C3200C16 8GB
Report a bug
×
Bug description
Source link