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Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB

Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Differences Specifications Comments

Differences

Samsung DDR3 8GB 1600MHz 8GB Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Micron Technology 16ATF4G64HZ-3G2E1 32GB Reasons to consider
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Report a bug
  • Below the latency in the PassMark tests, ns
    38 left arrow 43
    Around -13% lower latency
  • Faster reading speed, GB/s
    16.4 left arrow 14.9
    Average value in the tests
  • Faster write speed, GB/s
    13.7 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 38
  • Read speed, GB/s
    14.9 left arrow 16.4
  • Write speed, GB/s
    9.6 left arrow 13.7
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 3206

Samsung DDR3 8GB 1600MHz 8GB RAM comparisons

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Micron Technology 16ATF4G64HZ-3G2E1 32GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DQVE1908 512MB
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