RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2400C15-8GNS 8GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs G Skill Intl F4-2400C15-8GNS 8GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
G Skill Intl F4-2400C15-8GNS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
16.2
Average value in the tests
Faster write speed, GB/s
2,123.3
10.1
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C15-8GNS 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
59
Around -168% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2400C15-8GNS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
22
Read speed, GB/s
4,833.8
16.2
Write speed, GB/s
2,123.3
10.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
731
2706
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
G Skill Intl F4-2400C15-8GNS 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2400C15-8GNS 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-2666C18-32GRS 32GB
Crucial Technology CT102464BD160B 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-2400C15Z8GNT 8GB
Samsung M391B5673FH0-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
PNY Electronics PNY 2GB
Apacer Technology 78.C1GM3.C7Z0C 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 9905700-072.A01G 16GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMK32GX4M2D3600C18 16GB
Kingston 9905403-437.A01LF 4GB
Corsair CMV32GX4M1A2666C18 32GB
Samsung M471B5173QH0-YK0 4GB
Kingston HP26D4S9S8HJ-8 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMK32GX4M4K4133C19 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-3600C17-4GTZ 4GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Report a bug
×
Bug description
Source link