RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
16.4
Average value in the tests
Faster write speed, GB/s
2,123.3
10.5
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
59
Around -90% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
31
Read speed, GB/s
4,833.8
16.4
Write speed, GB/s
2,123.3
10.5
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
731
3039
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Smart Modular SG564568FG8N6KF-Z2 2GB
Wilk Elektronik S.A. GR2400D464L17S/8G 8GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M471A1K43DB1-CWE 8GB
Kingston 9905403-134.A00LF 2GB
Samsung M471A5143DB0-CPB 4GB
SK Hynix HYMP164U64CP6-Y5 512MB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
G Skill Intl F5-5600J4040C16G 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Corsair VSA2GSDS667C4 2GB
Kingston XRMWRN-MIE2 16GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3600C16-16GTRS 16GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M471A2K43BB1-CPB 16GB
Samsung M378B5173BH0-CH9 4GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
SK Hynix HYMP112S64CP6-S6 1GB
Avant Technology J641GU42J9266NL 8GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMK16GX4M2E4000C19 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMK8GX4M2A2800C16 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3600C17-16GTZSW 16GB
Report a bug
×
Bug description
Source link