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Samsung M3 78T2863EHS-CF7 1GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Samsung M3 78T2863EHS-CF7 1GB vs Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

总分
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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,123.3 left arrow 10.5
    测试中的平均数值
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB 需要考虑的原因
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 59
    左右 -90% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 31
  • 读取速度，GB/s
    4,833.8 left arrow 16.4
  • 写入速度，GB/s
    2,123.3 left arrow 10.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    731 left arrow 3039

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
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Kingston KVR24N17S8/4 4GB
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Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
UMAX Technology 16GB
UMAX Technology 16GB
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
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TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CMK64GX4M8A2400C14 8GB
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Crucial Technology CT102464BD160B 8GB
Crucial Technology CT102464BD160B 8GB
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Patriot Memory (PDP Systems) PSD38G16002 8GB
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Samsung 1600 CL10 Series 8GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CM4B8G1J2400A16K2-ON 8GB
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Corsair CMT64GX4M2C3600C18 32GB
内存RAM
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Avant Technology W641GU42J5213N3 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
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Kingston 9905403-011.A03LF 2GB
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Apacer Technology GD2.0918CT.001 4GB
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SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
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G Skill Intl F4-3600C16-16GTRG 16GB
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