RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 8ATF51264AZ-2G1A2 4GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Micron Technology 8ATF51264AZ-2G1A2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
15.8
Average value in the tests
Faster write speed, GB/s
2,123.3
11.0
Average value in the tests
Reasons to consider
Micron Technology 8ATF51264AZ-2G1A2 4GB
Report a bug
Below the latency in the PassMark tests, ns
36
59
Around -64% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
36
Read speed, GB/s
4,833.8
15.8
Write speed, GB/s
2,123.3
11.0
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
731
2417
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Micron Technology 8ATF51264AZ-2G1A2 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW16GX4M2Z3200C16 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology AFLD48EH1P 8GB
Samsung M471B5273DH0-CK0 4GB
Corsair CMG32GX4M2E3200C16 16GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Teikon TMA851S6AFR6N-UHHC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK16GX4M2B3733C17 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-2666C18-8GRS 8GB
AMD R538G1601U2S 8GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Dust Leopard DDR4-2400 C16 8GB 8GB
Report a bug
×
Bug description
Source link