Samsung M3 78T2953EZ3-CF7 1GB vs Lexar Co Limited LD4BU008G-H3200ULH 8GB

Overall score

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Overall score

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Differences Specifications Comments

Differences

Samsung M3 78T2953EZ3-CF7 1GB

Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB

Faster reading speed, GB/s

4 20.6

Average value in the tests

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Reasons to consider
Lexar Co Limited LD4BU008G-H3200ULH 8GB

Below the latency in the PassMark tests, ns

32 58

Around -81% lower latency
Faster write speed, GB/s

14.7 1,950.7

Average value in the tests
Higher memory bandwidth, mbps

25600 6400

Around 4 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 78T2953EZ3-CF7 1GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

58 32
Read speed, GB/s

4,241.0 20.6
Write speed, GB/s

1,950.7 14.7
Memory bandwidth, mbps

6400 25600

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

651 3393

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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