Samsung M3 78T2953EZ3-CF7 1GB vs Lexar Co Limited LD4BU008G-H3200ULH 8GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20.6

测试中的平均数值

Lexar Co Limited LD4BU008G-H3200ULH 8GB

需要考虑的原因
Lexar Co Limited LD4BU008G-H3200ULH 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 58

左右 -81% 更低的延时
更快的写入速度，GB/s

14.7 1,950.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 32
读取速度，GB/s

4,241.0 20.6
写入速度，GB/s

1,950.7 14.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

651 3393

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Apacer Technology 78.DAGNN.4030B 16GB

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Kingston 9905471-002.A00LF 2GB

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Crucial Technology CT8G4DFS8266.M8FH 8GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Corsair CMK16GX4M2D2400C14 8GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston XN205T-MIE 16GB

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Kingston 9905403-011.A03LF 2GB

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Corsair CMK16GX4M2K3600C19 8GB

Corsair CMK16GX4M2K3600C19 8GB