RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M471A5644EB0-CPB 2GB
比较
Crucial Technology CT25664BA160B.C16F 2GB vs Samsung M471A5644EB0-CPB 2GB
总分
Crucial Technology CT25664BA160B.C16F 2GB
总分
Samsung M471A5644EB0-CPB 2GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
更快的读取速度,GB/s
14.3
13.2
测试中的平均数值
更快的写入速度,GB/s
10.1
9.1
测试中的平均数值
需要考虑的原因
Samsung M471A5644EB0-CPB 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 -4% 更低的延时
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M471A5644EB0-CPB 2GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
28
读取速度,GB/s
14.3
13.2
写入速度,GB/s
10.1
9.1
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2227
1989
Crucial Technology CT25664BA160B.C16F 2GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB
Samsung M471A5644EB0-CPB 2GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston ACR16D3LS1NGG/4G 4GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA451U6MFR8N-TF 4GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3000C16-16GSXWB 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M378A1G43DB0-CPB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Panram International Corporation PUD42400C154G2NJW 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Kingston 9905458-017.A01LF 4GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2666C18-32GRS 32GB
Kingston 99U5471-020.A00LF 4GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Corsair CMH32GX4M2D3600C18 16GB
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M471A5644EB0-CPB 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3200C16-16GTZA 16GB
Patriot Memory (PDP Systems) 2400 C17 8GB
G Skill Intl F4-2133C15-16GFT 16GB
报告一个错误
×
Bug description
Source link