RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BL8G32C16U4B.M8FE 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Crucial Technology BL8G32C16U4B.M8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
17.9
Average value in the tests
Reasons to consider
Crucial Technology BL8G32C16U4B.M8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
46
Around -64% lower latency
Faster write speed, GB/s
14.9
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
21300
3200
Around 6.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
28
Read speed, GB/s
2,909.8
17.9
Write speed, GB/s
1,519.2
14.9
Memory bandwidth, mbps
3200
21300
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
3-3-3-12 / 400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
241
3460
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Crucial Technology BL8G32C16U4B.M8FE 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-2400C17-8GSXK 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Kingston HX421C14FB/4 4GB
Kingston KF556C40-16 16GB
Kingston KHX16LC9/8GX 8GB
Team Group Inc. DDR4 2666 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Protocol Engines Kingrock 800 2GB 2GB
Kingston ACR24D4U7D8MB-16 16GB
Asgard VMA45UG-MEC1U2AW1 8GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMW32GX4M4K4266C19 8GB
Kingston 39P5429-006.AO01 2GB
G Skill Intl F4-4133C17-8GTZR 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston KHX2133C13S4/4G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 2666 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KF2666C13D4/8GX 8GB
Report a bug
×
Bug description
Source link