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Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Overall score
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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Overall score
star star star star star
Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Differences Specifications Comments

Differences

Samsung M3 78T3354BZ0-CCC 256MB Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Patriot Memory (PDP Systems) 3866 C18 Series 8GB Reasons to consider
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    22 left arrow 46
    Around -109% lower latency
  • Faster reading speed, GB/s
    20.9 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    18.5 left arrow 1,519.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 3200
    Around 5.31 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 22
  • Read speed, GB/s
    2,909.8 left arrow 20.9
  • Write speed, GB/s
    1,519.2 left arrow 18.5
  • Memory bandwidth, mbps
    3200 left arrow 17000
Other
  • Description
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    3-3-3-12 / 400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    241 left arrow 4324

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