RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M393A2G40EB1-CPB 16GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Samsung M393A2G40EB1-CPB 16GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Samsung M393A2G40EB1-CPB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Below the latency in the PassMark tests, ns
46
56
Around 18% lower latency
Reasons to consider
Samsung M393A2G40EB1-CPB 16GB
Report a bug
Faster reading speed, GB/s
9.3
2
Average value in the tests
Faster write speed, GB/s
7.7
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
17000
3200
Around 5.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M393A2G40EB1-CPB 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
56
Read speed, GB/s
2,909.8
9.3
Write speed, GB/s
1,519.2
7.7
Memory bandwidth, mbps
3200
17000
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
241
2200
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Samsung M393A2G40EB1-CPB 16GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M393A2G40EB1-CPB 16GB
Kingston 9905403-444.A00LF 4GB
Kingston KF2666C16S4/16G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C19-16GRS 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
AMD R7S44G2606U1S 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMD16GX4M4C3200C16 4GB
Kingston KVR533D2N4 512MB
Corsair CMT32GX4M2C3600C18 16GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3000C16-8GTRS 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
DSL Memory D4SS1G081SH24A-A 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9965662-019.A00G 32GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Apacer Technology 78.C1GQB.4032B 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Report a bug
×
Bug description
Source link