Samsung M3 78T3354BZ0-CCC 256MB vs Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Overall score

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Overall score

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Differences Specifications Comments

Differences

Samsung M3 78T3354BZ0-CCC 256MB

Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB

Faster reading speed, GB/s

2 19.4

Average value in the tests

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Reasons to consider
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Below the latency in the PassMark tests, ns

19 46

Around -142% lower latency
Faster write speed, GB/s

15.0 1,519.2

Average value in the tests
Higher memory bandwidth, mbps

21300 3200

Around 6.66 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 78T3354BZ0-CCC 256MB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

46 19
Read speed, GB/s

2,909.8 19.4
Write speed, GB/s

1,519.2 15.0
Memory bandwidth, mbps

3200 21300

Other

Description

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

241 3397

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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