RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-2400C17-4GNT 4GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-2400C17-4GNT 4GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
G Skill Intl F4-2400C17-4GNT 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
18.1
Average value in the tests
Faster write speed, GB/s
2,168.2
13.8
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C17-4GNT 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
60
Around -161% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-2400C17-4GNT 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
23
Read speed, GB/s
4,595.2
18.1
Write speed, GB/s
2,168.2
13.8
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
941
3125
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
G Skill Intl F4-2400C17-4GNT 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R538G1601U2S-UO 8GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-2400C17-4GNT 4GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2666C15-4GVR 4GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
Kingston 9905403-090.A01LF 4GB
SK Hynix GKE800UD102408-2133 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston CBD26D4U9S8ME-8 8GB
Samsung M471B1G73QH0-YK0 8GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shenzhen Xingmem Technology Corp 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-2400C17-4GFT 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-4133C19-8GTZR 8GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston XRMWRN-MIE2 16GB
Samsung M393B2G70BH0-CH9 16GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
Report a bug
×
Bug description
Source link