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Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Overall score
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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Overall score
star star star star star
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Differences Specifications Comments

Differences

Samsung M3 78T5663RZ3-CE6 2GB Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Micron Technology 18ASF1G72PDZ-2G1B1 8GB Reasons to consider
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    54 left arrow 60
    Around -11% lower latency
  • Faster reading speed, GB/s
    9.3 left arrow 4
    Average value in the tests
  • Faster write speed, GB/s
    7.3 left arrow 2,168.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    60 left arrow 54
  • Read speed, GB/s
    4,595.2 left arrow 9.3
  • Write speed, GB/s
    2,168.2 left arrow 7.3
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    941 left arrow 1904

Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB RAM comparisons

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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