RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 91T2953GZ3-CF7 1GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Compare
Samsung M3 91T2953GZ3-CF7 1GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Overall score
Samsung M3 91T2953GZ3-CF7 1GB
Overall score
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 91T2953GZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
17
Average value in the tests
Reasons to consider
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
52
Around -126% lower latency
Faster write speed, GB/s
12.9
1,906.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 91T2953GZ3-CF7 1GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
52
23
Read speed, GB/s
4,672.4
17.0
Write speed, GB/s
1,906.4
12.9
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
698
2938
Samsung M3 91T2953GZ3-CF7 1GB RAM comparisons
Samsung M3 91T2953EZ3-CF7 1GB
Samsung M3 78T2953GZ3-CF7 1GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB RAM comparisons
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 91T2953GZ3-CF7 1GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston KKN2NM-MIE 4GB
Samsung M378B5773DH0-CH9 2GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9905630-007.A00G 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
A-DATA Technology DDR4 3000 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M378A1K43EB2-CWE 8GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA82GR7AFR8N-UH 16GB
Samsung M471B5673FH0-CF8 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M391A1G43EB1-CPB 8GB
A-DATA Technology DQVE1908 512MB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
PNY Electronics PNY 2GB
Apacer Technology 78.CAGR4.DFC0B 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3300C16-4GRRD 4GB
Kingston KVR16N11/8-SP 8GB
Essencore Limited KD4AGS88A-26N1600 16GB
Report a bug
×
Bug description
Source link