RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs ADVAN Inc AM42E28UD04T-NVL 4GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
ADVAN Inc AM42E28UD04T-NVL 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
18.2
Average value in the tests
Faster write speed, GB/s
2,622.0
14.4
Average value in the tests
Reasons to consider
ADVAN Inc AM42E28UD04T-NVL 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
77
Around -235% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
23
Read speed, GB/s
3,405.2
18.2
Write speed, GB/s
2,622.0
14.4
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
763
2830
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905700-011.A00G 8GB
Samsung M3 93T5750CZA-CE6 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
Samsung M378B5673EH1-CF8 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-4000C17-8GTZR 8GB
AMD AE34G1601U1 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
SpecTek Incorporated 16G2666CL19 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KH280C14D4/8X 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 99U5713-002.A00G 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
A-DATA Technology DQKD1A08 1GB
Corsair CMR64GX4M4A2666C16 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905624-018.A00G 8GB
Kingston HP698651-154-MCN 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Report a bug
×
Bug description
Source link