RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Gloway International (HK) STK4U2400D17082C 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Gloway International (HK) STK4U2400D17082C 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Gloway International (HK) STK4U2400D17082C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
14.3
Average value in the tests
Reasons to consider
Gloway International (HK) STK4U2400D17082C 8GB
Report a bug
Below the latency in the PassMark tests, ns
74
77
Around -4% lower latency
Faster write speed, GB/s
7.7
2,622.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Gloway International (HK) STK4U2400D17082C 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
74
Read speed, GB/s
3,405.2
14.3
Write speed, GB/s
2,622.0
7.7
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
1779
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Gloway International (HK) STK4U2400D17082C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BA1339.C16F 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Samsung M3 93T5750CZA-CE6 2GB
Gloway International (HK) STK4U2400D17082C 8GB
Transcend Information TS512MSK64W6H 4GB
Corsair CM4B16G7L2666A16K2-O 16GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-3600C19-8GTZRB 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMK8GX4M2D2666C16 4GB
PNY Electronics PNY 2GB
Samsung M378A1K43BB1-CRC 8GB
AMD AE34G1601U1 4GB
Corsair CMD32GX4M4C3200C14C 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston KWTHG4-MIE 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston XK2M26-MIE 16GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston XRGM6C-MIE 16GB
Kingston 9965433-034.A00LF 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMK128GX4M8A2666C16 16GB
Report a bug
×
Bug description
Source link