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Samsung M378A1G43DB0-CPB 8GB
AMD R744G2606U1S 4GB

Samsung M378A1G43DB0-CPB 8GB vs AMD R744G2606U1S 4GB

Overall score
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Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Overall score
star star star star star
AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Differences Specifications Comments

Differences

Samsung M378A1G43DB0-CPB 8GB Reasons to consider
Samsung M378A1G43DB0-CPB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    36 left arrow 76
    Around 53% lower latency
  • Faster write speed, GB/s
    10.3 left arrow 8.7
    Average value in the tests
AMD R744G2606U1S 4GB Reasons to consider
AMD R744G2606U1S 4GB
Report a bug
  • Faster reading speed, GB/s
    15.7 left arrow 15
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 17000
    Around 1.13 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378A1G43DB0-CPB 8GB
AMD R744G2606U1S 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 76
  • Read speed, GB/s
    15.0 left arrow 15.7
  • Write speed, GB/s
    10.3 left arrow 8.7
  • Memory bandwidth, mbps
    17000 left arrow 19200
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2569 left arrow 1809

Samsung M378A1G43DB0-CPB 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

AMD R744G2606U1S 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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