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Samsung M378A1G43DB0-CPB 8GB
Micron Technology 16G3200CL22 16GB
Compare
Samsung M378A1G43DB0-CPB 8GB vs Micron Technology 16G3200CL22 16GB
Overall score
Samsung M378A1G43DB0-CPB 8GB
Overall score
Micron Technology 16G3200CL22 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1G43DB0-CPB 8GB
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Faster reading speed, GB/s
15
14
Average value in the tests
Faster write speed, GB/s
10.3
7.3
Average value in the tests
Reasons to consider
Micron Technology 16G3200CL22 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
36
Around -29% lower latency
Higher memory bandwidth, mbps
25600
17000
Around 1.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 16G3200CL22 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
28
Read speed, GB/s
15.0
14.0
Write speed, GB/s
10.3
7.3
Memory bandwidth, mbps
17000
25600
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2569
2663
Samsung M378A1G43DB0-CPB 8GB RAM comparisons
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Micron Technology 16G3200CL22 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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