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Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology DDR4 3600 2OZ 8GB

Samsung M378A1K43EB2-CWE 8GB vs A-DATA Technology DDR4 3600 2OZ 8GB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Overall score
star star star star star
A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

Differences Specifications Comments

Differences

Samsung M378A1K43EB2-CWE 8GB Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
  • Higher memory bandwidth, mbps
    25600 left arrow 21300
    Around 1.2% higher bandwidth
A-DATA Technology DDR4 3600 2OZ 8GB Reasons to consider
A-DATA Technology DDR4 3600 2OZ 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 33
    Around -32% lower latency
  • Faster reading speed, GB/s
    19 left arrow 17.6
    Average value in the tests
  • Faster write speed, GB/s
    14.9 left arrow 12.0
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 25
  • Read speed, GB/s
    17.6 left arrow 19.0
  • Write speed, GB/s
    12.0 left arrow 14.9
  • Memory bandwidth, mbps
    25600 left arrow 21300
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2910 left arrow 3683

Samsung M378A1K43EB2-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

A-DATA Technology DDR4 3600 2OZ 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
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