RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Crucial Technology CT8G4SFRA32A.M4FE 8GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Faster reading speed, GB/s
17.6
14.6
Average value in the tests
Faster write speed, GB/s
12.0
7.4
Average value in the tests
Reasons to consider
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
33
Around -10% lower latency
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
30
Read speed, GB/s
17.6
14.6
Write speed, GB/s
12.0
7.4
Memory bandwidth, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2910
2196
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R5S38G1601U2S 8GB
Samsung M471A1K43CB1-CTD 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3000C16-16GTRS 16GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-2800C17-8GIS 8GB
Kingston 9905403-500.A01LF 8GB
Apacer Technology 78.CAGR4.40C0B 8GB
Samsung M471A1G44AB0-CWE 8GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology 78.C2GFA.AF30B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
A-DATA Technology VDQVE1B16 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Kingston KF2933C17S4/16G 16GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Kingston KHX1600C9D3/8G 8GB
Avant Technology W642GU42J2320NH 16GB
Qimonda 64T128020EDL2.5C2 1GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Samsung M378A1K43EB2-CWE 8GB
V-GEN D4S8GL30A8TS5 8GB
Report a bug
×
Bug description
Source link