RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A5244CB0-CTD 4GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Compare
Samsung M378A5244CB0-CTD 4GB vs Dust Leopard DDR4-2400 CL17 8GB 8GB
Overall score
Samsung M378A5244CB0-CTD 4GB
Overall score
Dust Leopard DDR4-2400 CL17 8GB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A5244CB0-CTD 4GB
Report a bug
Faster reading speed, GB/s
15.8
15.1
Average value in the tests
Faster write speed, GB/s
11.8
7.8
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Dust Leopard DDR4-2400 CL17 8GB 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
36
Around -50% lower latency
Specifications
Complete list of technical specifications
Samsung M378A5244CB0-CTD 4GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
24
Read speed, GB/s
15.8
15.1
Write speed, GB/s
11.8
7.8
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2497
2408
Samsung M378A5244CB0-CTD 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5273DH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Samsung M471B5773DH0-CH9 2GB
Corsair CM4X4GF2666Z16K4 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
Samsung M393B5170FH0-CK0 4GB
Corsair CMR64GX4M4K3600C18 16GB
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73DB0-CK0 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2800C15-4GTZ 4GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3866C18-8GTZ 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Apacer Technology 76.D105G.D090B 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-3600C19-8GVSB 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
Nanya Technology M2Y51264TU88A2B-3C 512MB
G Skill Intl F4-2133C15-16GFX 16GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Smart Modular SF464128CK8I6GKSEG 4GB
Report a bug
×
Bug description
Source link