RAM comparison Samsung M378A5244CB0-CTD 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Samsung M378A5244CB0-CTD 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Overall score

Samsung M378A5244CB0-CTD 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378A5244CB0-CTD 4GB

Below the latency in the PassMark tests, ns

36 37

Around 3% lower latency
Faster reading speed, GB/s

15.8 9.5

Average value in the tests
Faster write speed, GB/s

11.8 7.7

Average value in the tests
Higher memory bandwidth, mbps

21300 17000

Around 1.25% higher bandwidth

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Complete list of technical specifications

Samsung M378A5244CB0-CTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Main characteristics

Other

Description

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2497 1949

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Absolute Latency

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