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Samsung M378A5244CB0-CTD 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Compare
Samsung M378A5244CB0-CTD 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Overall score
Samsung M378A5244CB0-CTD 4GB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A5244CB0-CTD 4GB
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Below the latency in the PassMark tests, ns
36
73
Around 51% lower latency
Faster reading speed, GB/s
15.8
15.1
Average value in the tests
Faster write speed, GB/s
11.8
7.9
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M378A5244CB0-CTD 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
73
Read speed, GB/s
15.8
15.1
Write speed, GB/s
11.8
7.9
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2497
1724
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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